Resistive switching in oxides thin films
The electric-pulse-induced resistance switching (RS) effect has been extensively studied in the last decade due to the possibility of developing resistance random access memories (RRAM), which remains a strong candidate for next generation of non-volatile memories. RRAM technology is very attractive due to its simple metal/oxide/metal structure, high writing/erasing speed, high storage density and low power consumption. In addition, resistive switching devices, usually known as “memristors”, are thought to present radiation hardness, being therefore specially suited for working in hostile environments such as space or nuclear applications.
Here I will show recent results obtained in both manganite and titanium dioxide thin film devices. It was found that in both cases different resistive switching mechanisms coexist, being possible to selectively activate these mechanisms by controlling either the compliance current applied during the transition from high to low resistance (SET process) or the polarity of the initial electroforming. Strategies to improve the reliability of the devices, based on either a careful control of the electrical stimulus or device miniaturization, are presented. In addition, we have preliminary results indicating that our devices present radiation hardness.